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DISCRETE SEMICONDUCTORS DATA SHEET LTE42008R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 24 Philips Semiconductors Product specification NPN microwave power transistor FEATURES * Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR * Gold metallization realizes very stable characteristics and excellent lifetime * Input matching cell improves input impedance and allows an easier design of circuits. APPLICATION * Common emitter class-A linear power amplifiers up to 4.2 GHz. PINNING - SOT440A PIN 1 2 3 collector base LTE42008R DESCRIPTION emitter connected to flange olumns 1 c b DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. 2 Top view 3 MAM131 e Marking code: 196 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 C in a common emitter class-A amplifier. MODE OF OPERATION Class-A (CW) linear f (GHz) 4.2 VCE (V) 16 IC (mA) 250 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. PL1 (mW) 800 Gpo (dB) >7 Zi () 7.5 + j23.5 ZL () 2.5 - j9 1997 Feb 24 2 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature soldering temperature Tmb 75 C CONDITIONS open emitter RBE = 250 open base open collector - - - - - - -65 - at 0.3 mm from case; t = 10 s - MIN. LTE42008R MAX. 40 20 16 3 450 7.5 +200 200 235 V V V V UNIT mA W C C C handbook, halfpage 1 MGL060 handbook, halfpage 10 MLA736 Ptot (W) IC (A) 0.16 7.5 10-1 5.0 2.5 10-2 1 10 16 VCER (V) 102 0 -50 0 50 100 150 200 Tamb (oC) Tmb 75 C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE 250 . Fig.3 Fig.2 DC SOAR. Power dissipation derating as a function of mounting-base temperature. 1997 Feb 24 3 Philips Semiconductors Product specification NPN microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. See "Mounting recommendations in the General part of handbook SC15". CHARACTERISTICS Tmb = 25 C unless otherwise specified. SYMBOL ICBO ICER IEBO hFE Ccb Cce Ceb PARAMETER collector cut-off current emitter cut-off current emitter cut-off current DC current gain collector-base capacitance collector-emitter capacitance emitter-base capacitance CONDITIONS VCB = 20 V; IE = 0 VCB = 40 V; IE = 0 VCE = 20 V; RBE = 250 VEB = 1.5 V; IC = 0 VCE = 5 V; IC = 250 mA VCB = 16 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz VCE = 16 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz VCB = 10 V; VEB = 1 V; IC = IE = 0; f = 1 MHz MIN. - - - - 15 - - - PARAMETER thermal resistance from junction to mounting-base thermal resistance from mounting-base to heatsink CONDITIONS Tj = 70 C Tj = 70 C; note 1 LTE42008R MAX. 12 0.7 UNIT K/W K/W TYP. - - - - - 2 1.5 20 MAX. 150 1 0.5 0.4 150 - - - UNIT A mA mA A pF pF pF 1997 Feb 24 4 Philips Semiconductors Product specification NPN microwave power transistor Table 1 f (MHz) 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100 3200 3300 3400 3500 3600 3700 3800 3900 4000 4100 4200 4300 4400 4500 4600 4700 4800 4900 5000 LTE42008R Common-emitter scattering parameters: VCE = 16 V; IC = 250 mA; Tmb = 25 C; Zo = 50 ; typical values s11 MAGNITUDE (ratio) 0.80 0.79 0.79 0.80 0.79 0.79 0.78 0.77 0.75 0.73 0.71 0.67 0.64 0.60 0.56 0.52 0.49 0.47 0.46 0.48 0.51 0.56 0.61 0.67 0.71 0.76 0.79 0.81 0.82 0.82 0.82 ANGLE (deg) 160 157 155 153 151 150 148 147 146 144 143 143 141 141 142 143 146 149 154 159 161 162 161 158 155 152 147 143 140 136 132 s21 MAGNITUDE (ratio) 0.061 0.065 0.068 0.071 0.074 0.079 0.085 0.090 0.095 0.099 0.104 0.111 0.116 0.121 0.124 0.124 0.124 0.122 0.118 0.112 0.106 0.096 0.083 0.068 0.054 0.042 0.031 0.025 0.026 0.034 0.043 ANGLE (deg) 61.5 59.4 56.5 54.3 52.2 50.1 48.4 45.1 41.7 38.3 35.4 31.8 27.4 21.7 15.7 11.2 5.2 -2.2 -9.7 -15.7 -22.8 -29.4 -34.5 -37.4 -38.7 -35.4 -26.6 -5.6 28.8 40.1 52.4 s12 MAGNITUDE (ratio) 1.40 1.37 1.36 1.35 1.35 1.35 1.34 1.34 1.35 1.38 1.40 1.42 1.43 1.44 1.48 1.49 1.48 1.47 1.45 1.41 1.34 1.26 1.18 1.08 0.99 0.90 0.81 0.73 0.66 0.59 0.53 ANGLE (deg) 42.4 38.0 34.0 29.9 25.3 21.1 16.2 11.8 7.6 2.9 -2.6 -8.3 -14.1 -20.4 -28.1 -36.4 -45.1 -53.9 -63.1 -72.9 -82.5 -91.7 -100.1 -108.8 -117.8 -126.5 -134.7 -143.0 -151.2 -158.8 -167.3 s22 MAGNITUDE (ratio) 0.45 0.44 0.44 0.45 0.45 0.45 0.46 0.47 0.48 0.50 0.52 0.55 0.58 0.62 0.66 0.70 0.74 0.79 0.84 0.87 0.91 0.94 0.96 0.97 0.98 0.99 0.99 0.99 0.99 0.99 0.98 ANGLE (deg) -172.7 -173.7 -175.5 -176.5 -176.9 -177.6 -178.0 -178.3 -178.6 -178.9 -178.8 -179.2 -179.9 178.8 176.9 174.4 171.3 166.8 161.9 156.7 150.7 144.8 138.6 132.5 127.3 122.2 117.2 113.7 110.0 106.5 103.2 1997 Feb 24 5 Philips Semiconductors Product specification NPN microwave power transistor APPLICATION INFORMATION Microwave performance up to Tmb = 25 C in a common emitter class-A test circuit; note 1. MODE OF OPERATION Class-A (CW) Notes f (GHz) 4.2 VCE (V) (2) 16 IC (mA) (2) 250 PL1 (mW) (3) 800 (29) typ. 940 (29.7) Gpo (dB) (4) 7 typ. 7.5 LTE42008R Zi () 7.5 + j40 ZL () 4 + j4 1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners. 2. IC and VCE regulated. 3. Load power for 1 dB compressed power gain. 4. Low level power gain associated with PL1. handbook, full pagewidth 1.6 4.5 12.5 6.3 4.4 5.6 7 input VSWR < 3 Z0 = 50 2 0.7 3.4 6.4 1 0.3 0.8 MGK058 output VSWR < 3 Z0 = 50 Dimensions in mm. Input striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (r = 2.54); thickness: 1.6 mm. Output striplines on a double copper-clad Rexolite printed-circuit board with dielectric (r = 2.4); thickness: 0.25 mm. Fig.4 Prematching test circuit board. 1997 Feb 24 6 Philips Semiconductors Product specification NPN microwave power transistor LTE42008R handbook, halfpage 1.2 MGL011 handbook, halfpage 2 MGL017 15 PL (W) (1) PL1 typ PL1 (W) PL1 Gpo (dB) 0.8 1 10 0.4 Gpo 0 0 100 200 Pi (mW) 300 0 0 1 2 3 4 f (GHz) 5 5 f = 4.2 GHz; Tmb = 25 C. VCE = 16 V; IC = 250 mA (regulated). (1) Gpo = 7.5 dB. Fig.6 Fig.5 Load power as a function of input power. Load power and power gain associated with 1 dB compressed power gain as a function of frequency. handbook, halfpage 1300 MBH905 handbook, halfpage 7.7 MBH906 PL1 (mW) 1100 16 V 14 V VCE = 18 V 900 Gpo (dB) 7.3 VCE = 18 V 16 V 14 V 6.9 700 500 150 200 250 300 IC (mA) 350 6.5 100 200 300 IC (mA) 400 Tmb = 25 C; VCE and IC regulated. Tmb = 25 C; VCE and IC regulated. Fig.7 Load power associated with 1 dB compressed power gain as a function of collector current; typical values. Fig.8 Low level power gain associated with PL1 as a function of collector current; typical values. 1997 Feb 24 7 Philips Semiconductors Product specification NPN microwave power transistor LTE42008R 1 handbook, full pagewidth 0.5 4 3 0.2 2 1.5 +j 0 - j 1 0.2 0.5 1 2 2.5 3.5 2 4.2 GHz 5 Zi 10 5 10 10 5 0.2 0.5 1 VCE = 16 V; IC = 250 mA (regulated). Zo = 50 ; Tmb = 25 C. 2 MCD629 Fig.9 Input impedance as a function of frequency for PL1; typical values. 1 handbook, full pagewidth 0.5 2 0.2 ZL 2.5 2 1.5 5 1 GHz 10 +j 0 -j 3 0.2 3.5 4 4.2 0.2 5 0.5 1 2 5 10 10 0.5 1 VCE = 16 V; IC = 250 mA (regulated). Zo = 50 ; Tmb = 25 C. 2 MCD628 Fig.10 Optimum load impedance as a function of frequency for PL1; typical values. 1997 Feb 24 8 Philips Semiconductors Product specification NPN microwave power transistor PACKAGE OUTLINE LTE42008R handbook, full pagewidth 0.1 3.45 2.90 3 20.5 max seating plane 1.0 1 O 0.25 M 4.5 min 0.25 M 4.5 max 1.7 max 3.2 2.9 5.1 5.5 max 3.4 2 2.0 7.1 14.2 (1) 4.5 min MBC888 Dimensions in mm. Torque on screw: Max. 0.4 Nm. Recommended screw: M2.5. (1) Flatness of this area ensures full thermal contact with bolt head. Fig.11 SOT440A. 1997 Feb 24 9 Philips Semiconductors Product specification NPN microwave power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values LTE42008R This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 24 10 Philips Semiconductors Product specification NPN microwave power transistor NOTES LTE42008R 1997 Feb 24 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 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No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997 Internet: http://www.semiconductors.philips.com SCA53 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997 Feb 24 Document order number: 9397 750 01818 |
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